2N7000 데이터 시트보기 (PDF) - Philips Electronics

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2N7000

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

2N7000

2.4

handbook, halfpage

k

2

1.6

1.2

MDA695

(1)

(2)

0.8

0.4

−50

0

50

(1) ID = 500 mA; VGS = 10 V.

(2) ID = 75 mA; VGS = 4.5 V.

100

150

Tj (°C)

Fig.9

Temperature coefficient of drain-source on

resistance;

k = R-----D-R---S--D--(-S-o---n(--o)---n--a-)--t--a-2---t-5--T---°-j--C--- ; typical RDS(on).

1.2

handbook, halfpage

k

1.1

1

0.9

0.8

0.7

−50

0

MDA696

50

100

150

Tj (°C)

Fig.10 Temperature coefficient of gate-source

threshold voltage;

k = V-----G-V---S-G---(-S-t-h--(-)-t--h-a--)--t--a-2--t-5---T---°-j--C-- ; typical VGS(th) at 1 mA.

April 1995

7

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