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2SA1797 데이터 시트보기 (PDF) - Willas Electronic Corp.

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2SA1797
Willas
Willas Electronic Corp. Willas
2SA1797 Datasheet PDF : 4 Pages
1 2 3 4
WILLAS
SOT-89 Plastic-Encapsulate Transistors
2SA1797
TRANSISTOR (PNP)
FEATURES
Low saturation voltage
Excellent DC current gain characteristics
Pb-Free package is available
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-6
-2
500
150
-55-150
Units
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=-50µA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-50µA, IC=0
ICBO
VCB=-50V, IE=0
IEBO
VEB=-5V, IC=0
hFE
VCE=-2V, IC=-500mA
VCE(sat) IC=-1A, IB=-50mA
fT
VCE=-2V, IC=-0.5A, f=100MHz
Cob
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-50
V
-50
V
-6
V
-0.1 µA
-0.1 µA
82
270
-0.35 V
200
MHz
36
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
AGP
Q
120-270
AGQ
2012-10
WILLAS ELECTRONIC CORP.

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