2SB1218AR 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SB1218AR

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SB1 21 8 A

TRANSISTOR(PNP)

FEATURES

 High DC Current Gain

 Complementary to 2SD1819A

APPLICATIONS

 General Purpose Amplification

SOT–323

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-45

VCEO Collector-Emitter Voltage

-45

VEBO Emitter-Base Voltage

-7

IC

Collector Current

-100

PC

Collector Power Dissipation

150

RΘJA Thermal Resistance From Junction To Ambient

833

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE

VCE(sat)

fT

Cob

Test conditions

IC=-10µA, IE=0

IC=-2mA, IB=0

IE=-10µA, IC=0

VCB=-20V, IE=0

VCE=-10V, IB=0

VEB=-5V, IC=0

VCE=-10V, IC=-2mA

IC=-100mA, IB=-10mA

VCE=-10V,IE=1mA ,f=200MHz

VCB=-10V, IE=0, f=1MHz

Min

Typ

-45

-45

-7

160

80

2.7

CLASSIFICATION OF hFE

RANK

RANGE

MARKING

Q

160–260

BQ1

R

210–340

BR1

S

290–460

BS1

Max

-100

-100

-100

460

-0.5

Unit

V

V

V

nA

µA

nA

V

MHz

pF

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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