2SB1260 데이터 시트보기 (PDF) - Weitron Technology

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2SB1260

PNP Plastic-Encapsulate Transistor

Weitron Technology 

2SB1260

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC=-0.1 Adc, VCE=-3.0 Vdc)

Collector-Emitter Saturation Voltage

(IC=-500 mAdc, IB=-50mAdc)

Transition Frequency

(IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz)

hFE

82

VCE(sat)

-

-

390

-

-

-0.4

Vdc

fT

80

-

-

MHz

CLASSIFICATION OF hFE

Item

P

Range

82-180

Q

120-270

R

180-390

WEITRON

http://www.weitron.com.tw

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