2SD1664 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SD1664

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SD1664

TRANSISTOR (NPN)

FEATURES

z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)

z Complements to 2SB1132

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

32

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1

A

PC

Collector power dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

V(BR)CBO IC=50μA, IE=0

V(BR)CEO IC=1mA, IB=0

V(BR)EBO IE=50μA, IC =0

ICBO

VCB=20V, IE=0

IEBO

VEB=4V, IC=0

hFE

VCE=3V, IC=100mA

VCE(sat) IC=0.5A, IB=50mA

fT

VCE=5V, IC=50mA, f=100MHz

Cob

VCB=10V, IE=0, f=1MHz

MIN TYP MAX UNIT

40

V

32

V

5

V

0.5

μA

0.5

μA

82

390

0.4

V

150

MHz

15

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

DAP

Q

120-270

DAQ

R

180-390

DAR

１　

JinYu

semiconductor

www.htsemi.com

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