2SD965 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SD965

NPN TRANSISTOR

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SD965

TRANSISTOR (NPN)

SOT-89-3L

FEATURES

z Low Collector-Emitter Saturation Voltage

z Large Collector Power Dissipation and Current

z Mini Power Type Package

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

40

20

7

5

750

167

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

Min Typ

V(BR)CBO IC=100µA,IE=0

40

V(BR)CEO IC=1mA,IB=0

20

V(BR)EBO IE=10µA,IC=0

7

ICBO

VCB=10V,IE=0

IEBO

VEB=7V,IC=0

hFE(1)

VCE=2V, IC=1mA

200

hFE(2)

VCE=2V, IC=500mA

230

hFE(3)

VCE=2V, IC=2A

150

VCE(sat) IC=3A,IB=0.1A

fT

VCE=6V,IC=50mA，f=200MHz

150

Cob

VCB=20V, IE=0, f=1MHz

Max

0.1

0.1

800

1

50

CLASSIFICATION OF hFE（2）

RANK

RANGE

Q

230–380

R

340–600

S

560–800

Unit

V

V

V

µA

µA

V

MHz

pF

１　

JinYu

semiconductor

www.htsemi.com

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