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BAP64-05 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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BAP64-05
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
BAP64-05 Datasheet PDF : 2 Pages
1 2
BAP64-05
PIN DIODE
FEATURES
z High voltage, current controlled
z RF resistor for RF attenuators and switches
z Low diode capacitance
z Low diode forward resistance
z Low series inductance
z For applications up to 3 GHz
z RF attenuators and switches
Marking: 5K
SOT-23
Maximum Ratings @TA=25
Parameter
Continuous reverse voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
VR
IF
PD
RθJA
Tj
TSTG
Limits
175
100
2 50
500
150
-65~+150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Unit
V
mA
mW
/W
Parameter
Reverse voltage leakage current
Forward voltage
Diode capacitance
Diode forward resistance
Charge carrier life time
Series inductance
Symbol
Test conditions
MIN TYP
VR=175V
IR
VR=20V
VF
IF=50mA
VR=0, f=1MHz
0.52
Cd
VR=1V, f=1MHz
0.37
VR=20V, f=1MHz
0.23
IF=0.5mA, f=100MHz;note1
20
IF=1mA, f=100MHz ;note1
10
rD
IF=10mA, f=100MHz;note1
2
IF=100mA, f=100MHz;note1
0.7
when switched from
τL
IF = 10 mA to IR = 6 mA; RL =
1.55
100 Ω; measured at IR =3mA
LS
IF=100mA, f=100MHz
1.4
MAX
10
1
1.1
UNIT
µA
V
pF
0.35
40
20
3.8
1.35
μS
nH
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
1 
JinYu
semiconductor
www.htsemi.com

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