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BAS40V 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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BAS40V
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
BAS40V Datasheet PDF : 2 Pages
1 2
SCHOTTK Y DIODE
BAS40V
SOT-563
FEATURES
z Low Forward Voltage Drop
z Fast Switching
1
Marking: KAN
Maximum Ratings @TA=25
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance. Junction to
Ambient Air
Junction temperature
Storage temperature range
Symbol
VRM
VR
IO
Pd
RθJA
TJ
TSTG
Limits
40
200
150
833
-55-125
-65-150
Unit
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
Reverse breakdown voltage
V(BR)
IR= 10μA
40
Reverse voltage leakage current
Forward voltage
Total capacitance
Reverse recovery time
IR
VR=30V
VF
IF=1mA
IF=40mA
CT
VR=0,f=1MHz
t rr
IF=10mA, IR=IF=1mA
RL=100
200
380
1000
5
5
UNIT
V
nA
mV
pF
nS
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05

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