BC237 데이터 시트보기 (PDF) - Philips Electronics
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BC237 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC237; BC237B
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BC237
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 0.1 mA; VCE = 5 V; see Fig.2
IC = 2 mA; VCE = 5 V; see Fig.2
BC237B
collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; note 1
base-emitter saturation voltage IC = 100 mA; IB = 5 mA
base-emitter voltage
IC = 2 mA; VCE = 5 V
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN. TYP. MAX. UNIT
−
−
15 nA
−
−
5
µA
−
−
100 nA
−
250 −
120 −
200 −
−
−
−
−
580 −
−
11
−
1.5
100 −
−
−
460
460
600
1 200
700
−
−
−
10
mV
mV
mV
pF
pF
MHz
dB
300
handbook, full pagewidth
hFE
200
VCE = 5 V
MBH724
100
0
10−2
1997 Sep 04
10−1
1
10
Fig.2 DC current gain; typical values.
4
102
IC (mA)
103
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