BC847 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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BC847 Datasheet PDF : 4 Pages
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BC847
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
PIN Connection
Features
• High voltage : VCEO=45V
• Complementary pair with BC857
1
2
3
SOT-23
Ordering Information
Type NO.
Marking
Package Code
BC847
RR □ □
①② ③
SOT-23
① Device Code ② hFE Rank ③ Year&Week Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
50
45
5
100
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0
Base-Emitter turn on voltage
VBE(ON) VCE=5V, IC=2mA
Base-Emitter saturation voltage
VBE(sat) IC=100mA, IB=5mA
Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=5mA
Collector cut-off current
ICBO
VCB=35V, IE=0
DC current gain
Transition frequency
hFE*
fT
VCE=5V, IC=2mA
VCE=5V, IC=10mA
f=100MHz
Collector output capacitance
Noise figure
Cob
VCB=10V, IE=0, f=1MHz
NF
VCE=5V, IC=200μA,
f=1KHz, Rg=2KΩ
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KSD-T5C028-000
(Ta=25°C)
Min. Typ. Max. Unit
45
-
-
V
550
-
700 mV
-
900
-
mV
-
-
600 mV
-
-
110
-
15
nA
800
-
-
150
-
MHz
-
-
4.5
pF
-
-
10
dB
1
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