BC868-10 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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BC868-10

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

TRANSISTOR (NPN)

FEATURES

z High current

z Low voltage

SOT-89

BC68 8

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

32

20

5

1

500

150

-55-150

Units

V

V

V

A

mW

℃

℃

1. BASE

2. COLLECTOR

3. EMITTER

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Collector-base breakdown voltage

V(BR)CBO IC=100μA,IE=0

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA,IB=0

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

Collector cut-off current

ICBO

VCB=25V,IE=0

Emitter cut-off current

IEBO

VEB=5V,IC=0

hFE(1) VCE=1V,IC=500mA

DC current gain

hFE(2) VCE=1V,IC=1A

hFE(3) VCE=10V,IC=5mA

Collector-emitter saturation voltage

VCE(sat) IC=1A,IB=100mA

Base-emitter voltage

VBE1

VBE2

VCE=10V,IC=5mA

VCE=1V,IC=1A

Transition frequency

CLASSIFICATION OF hFE(1)

Rank

fT

BC868-10

VCE=5V,IC=10mA,f=100MHz

BC868-16

Range

85-160

100-250

Marking

CBC

CCC

MIN TYP MAX UNIT

32

V

20

V

5

V

0.1

μA

0.1

μA

85

375

60

50

0.5

V

0.62

V

1

V

40

MHz

BC868-25

160-375

CDC

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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