BC868 데이터 시트보기 (PDF) - TY Semiconductor

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BC868

NPN Medium Power Transistor

TY Semiconductor 

SMD Type

TransistIoCrs

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

BC868

BC868-25

Collector-emitter saturation voltage

Base to emitter voltage

Collector capacitance

Transition frequency

Symbol

Testconditons

ICBO VCB = 25 V, IE = 0

VCB = 25 V, IE = 0; Tj = 25

IEBO VEB = 5 V, IC = 0

IC = 5 mA; VCE = 10 V

hFE IC = 500 mA; VCE = 1 V

IC = 1 A; VCE = 1 V

hFE IC = 500 mA; VCE = 1 V

VCE(sat) IC = 1 A; IB = 100 mA

IC = 5 mA; VCE = 10 V

VBE

IC = 1 A; VCE = 1 V

CC IE = Ie = 0; VCB = 10 V; f = 1 MHz

fT

IC = 50 mA; VCE = 5 V; f = 100 MHz

BC868

Min Typ Max Unit

100 nA

10 ìA

100 nA

50

85

375

60

160

375

500 mV

700 mV

1

V

22

pF

40 170

MHz

hFE Classification

TYPE

Marking

BC868

CAC

BC868-25

CDC

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