BCY79 데이터 시트보기 (PDF) - Comset Semiconductors
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BCY79 Datasheet PDF : 4 Pages
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PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Ratings
Test Condition(s)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
VCB =-35 V, VBE =0V
VCB =-25 V, VB =0V
VCB =-35 V
VBE =0V,Tj =150°C
VCB =-25 V
VBE =0V,Tj =150°C
VBE =-4.0 V, IC =0
Collector Emitter Breakdown
Voltage
IC =-2 mA, IB =0
Emitter Base Breakdown
Voltage
IE =-1µA, IC =0
Collector-Emitter saturation
Voltage
IC =-10 mA, IB =-0.25 mA
IC =-100 mA, IB =-2.5 mA
Base-Emitter Saturation
Voltage
IC =-10 mA, I B=-0.25 mA
IC =-100 mA, IB =-2.5 mA
IC =-10 µA, VCE =-5 V
Base-Emitter Voltage
IC =-2 mA, VCE =-5 V
IC =-10 mA, VCE =-1 V
IC =-100 mA, VCE =-1 V
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
Min Typ Mx Unit
-
-
-20 nA
-
-
-10 µA
-
-
-45 -
-32 -
-5 -
-20 nA
-
-
V
-
V
- -0.12 -0.25
- -04 -08
V
-0.6 -0.7 -0.85
-0.7 -0.85 -1.2
- -0.55 -
-0.6 -0.65 -0.75
V
- -0.68 -
- -0.75 -
BCY79VII BCY79VIII BCY79IX BCY79X
BCY78VII BCY78VIII BCY78IX BCY78X
IC =-10 µA, VCE =-5 V
-
Typ.140
>30
Typ.200
>40
Typ.270
>100
Typ.390
hFE
DC Current Gain IC =-2 mA, VCE =-5 V
>120
<220
>180
<310
>250
<460
>380
<630
>80
IC =-10 mA, VCE =-1 V
-
>120
<400
>160
<630
>240
<1000
IC =-100 mA, VCE =-1 V
>40
>45
>60
>60
hfe
Small-Signal
IC =2 mA, VC E=5 V
>125
>175
>250
>350
Current Gain
f = 1kHz
<250
<350
<500
<700
COMSET SEMICONDUCTORS
2/4
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