BF822 데이터 시트보기 (PDF) - General Semiconductor

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BF822

Small Signal Transistors (NPN)

General Semiconductor 

BF820, BF822

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Collector-Base Breakdown Voltage BF820 V(BR)CBO 300

–

at IC = 100 µA, IB = 0

BF822

V(BR)CBO

250

–

Collector-Emitter Breakdown Voltage BF822 V(BR)CEO 250

–

at IC = 10 mA, IE = 0

Collector-Emitter Breakdown Voltage BF820 V(BR)CER 300

–

at RBE = 2.7 kΩ, IC = 10 mA

Emitter-Base Breakdown Voltage

at IE = 100 µA, IB = 0

V(BR)EBO

5

–

Collector-Base Cutoff Current

at VCB = 200 V, IE = 0

ICBO

–

–

Collector-Emitter Cutoff Current

at RBE = 2.7 kΩ, VCE = 250 V

at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C

ICER

ICER

Collector Saturation Voltage

at IC = 30 mA, IB = 5 mA

VCEsat

–

–

DC Current Gain

at VCE = 20 V, IC = 25 mA

Gain-Bandwidth Product

at VCE = 10 V, IC = 10 mA

hFE

50

–

fT

60

–

Feedback Capacitance

at VCE = 30 V, IC = 0, f = 1 MHz

Cre

–

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1) Device on fiberglass substrate, see layout

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

Max.

Unit

–

V

–

V

–

V

–

V

–

V

10

nA

50

10

0.6

–

–

1.6

4301)

nA

µA

V

–

MHz

pF

K/W

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