BSM 15 GD 120 D2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω
10 3
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A
10 3
tdoff
t
ns
tdoff
t
ns
10 2
10 2
tr
tdon
tf
tdon
tr
tf
10 1
0
5 10 15 20 25 30 A 40
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω
10
mWs
E
8
7
Eon
6
5
4
3
Eoff
2
1
0
0 5 10 15 20 25 30 A 40
IC
10 1
0
50
100 150 200
Ω
300
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 15 A
10
mWs
E
8
7
6
5
4
Eon
3
2
Eoff
1
0
0
50
100 150 200
Ω
300
RG
Semiconductor Group
7
Feb-10-1997