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BSM15GD60DN2 데이터 시트보기 (PDF) - Siemens AG
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BSM15GD60DN2
IGBT Power Module
Siemens AG
BSM15GD60DN2 Datasheet PDF : 9 Pages
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BSM 15 GD 60 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
30
A
26
I
F
24
22
20
18
T
j
=125°C
T
j
=25°C
16
14
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0
V
3.0
V
F
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
Diode
10
1
K/W
Z
thJC
10
0
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
s 10
0
Semiconductor Group
8
Jan-09-1997
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