BSM 200 GT 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω
-
180
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω
-
80
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω
-
750
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω
-
70
ns
350
160
950
100
Free-Wheel Diode
Diode forward voltage
VF
IF = 200 A, VGE = 0 V, Tj = 25 °C
-
IF = 200 A, VGE = 0 V, Tj = 125 °C
-
Reverse recovery time
trr
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C
-
Reverse recovery charge
Qrr
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs
Tj = 25 °C
-
Tj = 125 °C
-
V
2.3
2.8
1.8
-
ns
400
-
µC
12
-
36
-
Semiconductor Group
3
Aug-23-1996