BUK9605-30A 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK9605-30A Datasheet PDF : 13 Pages
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BUK9605-30A
N-channel TrenchMOS logic level FET
150
gfs
(S)
100
50
003aag059
2.0
a
1.5
1.0
0.5
003aag060
0
0
20
40
60
80
100
ID (A)
VDS > ID x RDSon
0
-100
0
100
200
Tmb (°C)
Fig 10. Forward transconductance as a function of
drain current; typical values
ID = 25 A; VGS = 5 V
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
2.5
VGS(th)
(V)
2.0
1.5
1.0
maximum
typical
minimum
003aag061
10-1
ID
(A)
10-2
10-3
10-4
003aag062
2 % typical 98 %
0.5
10-5
0
-100
0
100
200
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 12. Gate-source threshold voltage as a function of
junction temperature
10-6
0
1
2
3
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 13. Sub-threshold drain current as a function of
gate-source voltage
BUK9605-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2011
© Nexperia B.V. 2017. All rights reserved
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