BUZ41A 데이터 시트보기 (PDF) - Harris Semiconductor
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BUZ41A Datasheet PDF : 5 Pages
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BUZ41A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ20
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current TC = 35oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
500
4.5
18
±20
75
0.6
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V
500
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 1mA (Figure 9)
2.1
Zero Gate Voltage Drain Current
IDSS
TJ = 25oC, VDS = 500V, VGS = 0V
-
TJ = 125oC, VDS = 500V, VGS = 0V
-
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
IGSS VDS = 0V, VGS = 20V
-
rDS(ON) ID = 2.5A, VGS = 10V (Figure 8)
-
gfs
VDS = 25V, ID = 2.5A (Figure 11)
1.5
td(ON) VCC = 30V, ID ≈ 2.6A, VGS = 10V, RGS = 50Ω, RL
-
= 10Ω. (Figures 14, 15)
tr
-
td(OFF)
-
tf
-
Input Capacitance
Output Capacitance
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
-
COSS
-
Reverse Transfer Capacitance
CRSS
-
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient RθJA
Source to Drain Diode Specifications
TYP
-
3
20
100
10
1.4
2.5
30
40
110
50
1500
110
40
≤ 1.67
≤ 75
MAX
-
4
250
1000
100
1.5
-
45
60
140
65
2000
170
70
UNITS
V
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
pF
pF
pF
oC/W
oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD
TC = 25oC
-
-
4.5
ISDM
TC = 25oC
-
-
18
VSD
TJ = 25oC, ISD = 9A, VGS = 0V
-
1.1
1.5
trr
TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs,
-
1200
-
QRR
VR = 100V
-
6
-
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
2
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