BYM11-100-E3/97(2006) 데이터 시트보기 (PDF) - Vishay Semiconductors
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상세내역
제조사
BYM11-100-E3/97
(Rev.:2006)
(Rev.:2006)
Vishay Semiconductors
BYM11-100-E3/97 Datasheet PDF : 4 Pages
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BYM11-50 thru BYM11-1000, RGL41A thru RGL41M
Vishay General Semiconductor
10
100
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
Tj = 25 °C
10
Pulse Width = 300 µs
0.1
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10
1
Tj = 100 °C
100
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
10
0.1
1
Tj = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-213AB
SOLDERABLE ENDS
1st BAND
D2
=
D1
+
-
0
0.008
(0.20)
D1 =
D2
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
0.022 (0.56)
0.018 (0.46)
1st band denotes type and positive end (cathode)
0.049 MIN
(1.25) MIN
Mounting Pad Layout
0.138 MAX
(3.5) MAX
0.118 MIN
(3.0) MIN
0.238 (6.0)
REF
Document Number 88547
26-Jun-06
www.vishay.com
3
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