CR03AM-8 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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CR03AM-8 Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
200
RGK = 1kΩ
180
160
140
120
100
Tj = 25°C
80
60
Tj = 110°C
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
400
# 1 10µA 1.0mA
# 2 26µA 1.1mA
300
#1
#2
200
100
VD = 12V, Tj = 25°C
0
10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
GATE TO CATHODE RESISTANCE (kΩ)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7
5
4
TYPICAL EXAMPLE
IGT (DC)
# 1 16µA
3
# 2 65µA
2
#1
#2
103
7
5
4
3
2
Tj = 25°C
102
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
RGK = 1kΩ
5
3
2
101
7 DISTRIBUTION
5
TYPICAL EXAMPLE
3
2
100
7
5
3
2
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,IG,,,,,T(2,,,,,5°,,,,,C) =,,,,,35µA
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Feb.1999
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