DB4 데이터 시트보기 (PDF) - Unspecified

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DB4

SILICON BIDIRECTIONAL DIAC

Unspecified 

RoHS

DB3-DB6

WEJ ELECTRONIC CO.,LTD DIAGRAM1:Current-voltage characteristics

+IF

10mA

IBO

IB

-V

+V

0.5 VBO

V

VBO

-IF

FIG.1-Power dissipation versus ambient

temperature (maximum values)

P(mW)

160

140

120

100

80

60

40

20

Tamb(oC)

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

FIG.3-Peak pulse current versus pulse duration

(maximum values)

ITRM(A)

2

1

F=100Hz

Tj initial=25oC

DIAGRAM2 : Test circuit for output voltage

220V

50Hz

10KΩ

500KΩ

0.1 F

D.U.T

Vo

R=20Ω

DIAGRAM3 : Test circuit see diagram2 adjust Rfor

IP=0.5A

90%

IF

10%

tr

FIG.2-Relative variation of VBO versus junction

temperature (typical values)

VBO(Tj)

VBO(Tj=25oC)

1.08

1.06

1.04

1.02

1.00

25

50

75

Tj o(C)

100

125

0.1

tp( s)

0.01

10

100

1000

10000

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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