EGP20A- 데이터 시트보기 (PDF) - Fairchild Semiconductor
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EGP20A- Datasheet PDF : 3 Pages
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Discrete POWER & Signal
Technologies
EGP20A - EGP20K
Features
• Glass passivated cavity-free junction.
• High surge current capability.
• Low leakage current.
• Superfast recovery time for high
efficiency.
• Low forward voltage, high current
capability.
DO-15
COLOR BAND DENOTES CATHODE
1.0 min (25.4)
Dimensions in
inches (mm)
0.300 (7.62)
0.230 (5.84)
0.140 (3.56)
0.104 (2.64)
0.034 (0.86)
0.028 (0.71)
2.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Average Rectified Current
.375 " lead length @ TA = 55°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2.0
75
3.13
25
40
15
-65 to +150
-65 to +150
Units
A
A
W
mW /°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 2.0 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
Device
20A 20B 20C 20D 20F 20G 20J 20K
50 100 150 200 300 400 600 800
35
70
105 140 210 280 420 560
50 100 150 200 300 400 600 800
5.0
100
50
75
0.95
1.25
1.7
70
45
Units
V
V
V
µA
µA
nS
V
pF
©1999 Fairchild Semiconductor Corporation
EGP20A - EGP20K, Rev. A
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