EGP30A(2007) 데이터 시트보기 (PDF) - Vishay Semiconductors
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EGP30A Datasheet PDF : 4 Pages
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EGP30A thru EGP30G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
Patented*
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
®
GP20
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
TJ max.
3.0 A
50 V to 400 V
125 A
50 ns
0.95 V, 1.25 V
150 °C
FEATURES
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 260° C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
free-wheeling application in switching mode
converters and inverters for consumer, computer and
telecommunication.
MECHANICAL DATA
Case: GP20, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
50
VRMS
35
VDC
50
IF(AV)
IFSM
100
150
200
300
400
70
105
140
210
280
100
150
200
300
400
3.0
125
Operating and storage temperature range
TJ, TSTG
- 65 to + 150
UNIT
V
V
V
A
A
°C
Document Number: 88584 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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