MBM29LV652UE90 데이터 시트보기 (PDF) - Fujitsu

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MBM29LV652UE90

Flash memory CMOS 64M (4M x 16) bit

Fujitsu 

MBM29LV652UE90

Notes : • Address bits = X = “H” or “L” for all address commands except or Program Address (PA) and Sector Address

(SA).

• Bus operations are defined in “MBM29LV652UE User Bus Operations Table”.

• RA = Address of the memory location to be read.

PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of

the write pulse.

SA = Address of the sector to be erased. The combination of A21, A20, A19, A18, A17, A16 and A15 will

uniquely select any sector.

• RD = Data read from location RA during read operation.

PD = Data to be programmed at location PA. Data is latched on the rising edge of write pulse.

• SPA = Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0).

SD = Sector group protection verify data. Output 01h at protected sector group addresses and output

00h at unprotected sector group addresses.

• Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

• HRBA = Bank Address of the HiddenROM area (A21 = A20 = A19 = VIL)

• The system should be genarated the following address patterns :

Word mode : 555h or 2AAh to addresses A10 to A0

Byte mode : AAAh or 555h to addresses A10 to A0, and A−1

• The command combinations not described in command Definitions table are illegal.

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