F25L016A-50PAG 데이터 시트보기 (PDF) - [Elite Semiconductor Memory Technology Inc.
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F25L016A-50PAG Datasheet PDF : 32 Pages
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ESMT
F25L016A
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure
to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 19 and 20
TABLE 4: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V ; TA=0~70oC
Symbol
IDDR
IDDW
ISB
ILI
ILO
VIL
VIH
VOL
VOH
Parameter
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Limits
Min Max Units
15 mA
40 mA
75
µA
1
µA
1
µA
0.7 VDD 0.8
V
V
VDD-0.2 0.2
V
V
Test Conditions
CE =0.1 VDD/0.9 VDD@33 MHz, SO=open
CE =VDD
CE =VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
TABLE 5 : RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
TPU-READ1
TPU-WRITE1
VDD Min to Read Operation
VDD Min to Write Operation
Parameter
Minimum
10
10
Units
µs
µs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 6: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
COUT1
CIN1
Output Pin Capacitance
Input Capacitance
Description
Test Condition
VOUT = 0V
VIN = 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
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