FCX591 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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FCX591

TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

FCX591

TRANSISTOR (PNP)

FEATURES

Power dissipation

SOT-89

1. BASE

MARKING:P1

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-80

-60

-5

-1

0.5

150

-65-150

Units

V

V

V

A

W

℃

℃

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector- Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO*

V(BR)EBO

ICBO

IEBO

ICES

hFE*

VCE(sat) *

VBE(sat) *

VBE*

fT

Cob

Test conditions

IC=-100μA , IE=0

IC= -10mA , IB=0

IE=-100μA, IC=0

VCB=-60 V , IE=0

VEB=-4 V , IC=0

VCES=-60 V, IE=0

VCE=-5V, IC= -1mA

VCE=-5V, IC= -500mA

VCE=-5V, IC= -1A

VCE=-5V, IC= -2A

IC=-500 mA, IB= -50mA

IC=-1A, IB= -100mA

IC=-1A, IB= -100mA

VCE=-5V, IC= -1A

VCE= -10V, IC=- 50mA

f =100MHz

VCB=-10V, f=1MHz

MIN MAX

-80

-60

-5

-0.1

-0.1

-0.1

100

100 300

80

15

-0.3

-0.6

-1.2

-1

150

10

UNIT

V

V

V

μA

μA

μA

V

V

V

MHz

pF

*Pulse width=300s. Duty cycle 2%

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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