FQP12N20L 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQP12N20L Datasheet PDF : 8 Pages
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Typical Characteristics
V
GS
Top : 10 V
8.0 V
6.0 V
101
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.2
VGS = 5 V
0.9
V = 10V
GS
0.6
0.3
0.0
0
6
12
18
24
30
36
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
iss
C
oss
C
rss
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 100V
DS
8
V = 160V
DS
6
4
2
※ Note : ID = 11.6 A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, February 2001
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