FZT1051A(1998) 데이터 시트보기 (PDF) - Diodes Incorporated.

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FZT1051A
(Rev.:1998)

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

FZT1051A

TYPICAL CHARACTERISTICS

1.0

+25°C

0.8

0.6

IC/IB=50

IC/IB=100

IC/IB=200

0.4

0.2

0

1m

10m 100m

1

10

100

IC - Collector Current (A)

VCE(sat) v IC

1.0

IC/IB=100

0.8

0.6

-55°C

+25°C

+100°C

0.4

+150°C

0.2

0

1m

10m 100m

1

10

100

IC - Collector Current (A)

VCE(sat) v IC

750

VCE=2V

500

+100°C

+25°C

-55°C

250

0

1m

10m 100m

1

10

100

IC - Collector Current (A)

hFE v IC

1.2

IC/IB=100

0.9

0.6

0.3

0

1m

-55°C

+25°C

+100°C

+150°C

10m 100m

1

10

100

IC - Collector Current (A)

VBE(sat) v IC

1.6

VCE=2V

1.2

0.8

0.4

0

1m

-55°C

+25°C

+100°C

+150°C

10m 100m

1

10

100

IC - Collector Current (A)

VBE(on) v IC

100

10

DC

1s

1

100ms

10ms

1ms

100us

100m

100m

1

10

100

VCE - Collector Emitter Voltage (V)

Safe Operating Area

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