FZT1051A 데이터 시트보기 (PDF) - TY Semiconductor

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FZT1051A

NPN Silicon Planar Medium Power High Gain Transistor

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector Cut-Off Current

Collector-emitter cut-off current

Emitter Cut-Off Current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter ON voltage *

Static Forward Current Transfer Ratio

Transitional frequency

Output capacitance

Turn-on time

Turn-off time

* Pulse test: tp = 300 ìs; d

0.02.

Transistors

Product specification

FZT1051A

Symbol

Testconditons

V(BR)CBO IC=100ìA

V(BR)CEO IC=10mA

V(BR)EBO IE=100ìA

ICBO VCB=120V

ICES VCE=120V

IEBO VEB=4V

IC=0.2A, IB=10mA

VCE(sat) IC=1A, IB=10mA

IC=2A, IB=20mA

IC=5A, IB=100mA

VBE(sat) IC=5A, IB=100mA

VBE(on) IC=5A, VCE=2V

IC=10mA, VCE=2V*

IC=1A, VCE=2V*

hFE

IC=5A, VCE=2V*

IC=10A, VCE=2V*

fT IC=50mA, VCE=10V f=100MHz

Cobo VCB=10V, f=1MHz

t(on) IC=3A, VCC=10V

t(off) IB1=IB2=30mA

Min Typ Max Unit

150 190

V

40 60

V

5

9

V

0.3 10 nA

0.3 10 nA

0.3 10 nA

17 25

85

140

120

180

mV

250 340

980 1100 mV

915 1000 mV

290 440

270 450 1200

130 220

40 55

155

MHz

27 40 pF

220

ns

540

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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