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GMS30C2216 데이터 시트보기 (PDF) - Hynix Semiconductor

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GMS30C2216
Hynix
Hynix Semiconductor Hynix
GMS30C2216 Datasheet PDF : 320 Pages
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Overview
0-3
Registers:
32 global and 64 local registers of 32 bits each
16 global and up to 16 local registers are addressable directly
Flags:
Zero(Z), negative(N), carry(C) and overflow(V) flag
Interrupt-mode, interrupt-lock, trace-mode, trace-pending, supervisor state, cache-mode
and high global flag
Register Data Types:
Unsigned integer, signed integer, signed short, signed complex short, 16-bit fixed-point,
bitstring, IEEE-754 floating-point, each either 32 or 64 bits
External Memory:
Address space of 4Gbytes, divided into five areas
Separate I/O address space
Load/Store architecture
Pipelined memory and I/O accesses
High-order data located and addressed at lower address (big endian)
Instructions and double-word data may cross DRAM page boundaries
On-chip Memory:
8Kbytes internal (on-chip) memory
Memory Data Types:
Unsigned and signed byte (8 bit)
Unsigned and signed halfword (16 bit), located on halfword boundary
Undedicated word (32 bit), located on word boundary
Undedicated double-word (64 bit), located on word boundary
Runtime Stack:
Runtime stack is divided into memory part and register part
Register part is implemented by the 64 local registers holding the most recent stack
frame(s)
Current stack frame (maximum 16 registers) is always kept in register part of the stack
Data transfer between memory and register part of the stack is automatic
Upper stack bound is guarded

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