HJ44H11G-AA3-T(2012) 데이터 시트보기 (PDF) - Unisonic Technologies
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HJ44H11G-AA3-T Datasheet PDF : 3 Pages
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HJ44H11
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Emitter Voltage
VCEO
80
V
Collector-Emitter Voltage
VCES
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
8
A
Base Current
IB
5
A
SOT-223
5
Power Dissipation (TC=25℃)
TO-220
PD
65
W
TO-252
20
Junction Temperature
Storage Temperature
TJ
TSTG
+150
℃
-55~+150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter Breakdown Voltage
BVCEO IC=30mA, IB=0
80
Collector-Emitter Breakdown Voltage
BVCES IC=1mA, IB=0
80
Emitter-Base Breakdown Voltage
BVEBO IE=1mA, IC=0
5
Collector Cut-Off Current
ICES VCB=80V, VEB=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=8A, IB=0.4A
Base-Emitter Saturation Voltage(Note)
VBE(SAT) IC=8A, IB=0.8A
DC Current Gain (Note)
hFE1 VCE=1V, IC=2A
60
hFE2 VCE=1V, IC=4A
40
Output Capacitance
COB VCB=10V
Transition Frequency
fT VCE=10V, IC=500mA, f=20MHz
Note: Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
TYP
130
50
MAX
10
50
1
1.5
UNIT
V
V
V
uA
uA
V
V
pF
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R209-024.D
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