HJ44H11L-TN3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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HJ44H11L-TN3-R

NPN EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

HJ44H11

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector- Emitter Voltage

VCEO

80

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCES

80

V

VEBO

5

V

Collector Current

Base Current

IC

8

A

IB

5

A

SOT-223

5

Power Dissipation (TC=25°C)

TO-220

PD

65

W

TO-252

20

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-Emitter Breakdown Voltage

BVCEO IC=30mA, IB=0

80

Collector-Emitter Breakdown Voltage

BVCES IC=1mA, IB=0

80

Emitter-Base Breakdown Voltage

BVEBO IE=1mA, IC=0

5

Collector Cut-Off Current

ICES VCB=80V, VEB=0

Emitter Cut-off Current

IEBO VEB=5V, IC=0

Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=8A, IB=0.4A

Base-Emitter Saturation Voltage(Note)

VBE(SAT) IC=8A, IB=0.8A

DC Current Gain (Note)

hFE1 VCE=1V, IC=2A

60

hFE2 VCE=1V, IC=4A

40

Output Capacitance

COB VCB=10V

Transition Frequency

fT

VCE=10V, IC=500mA, f=20MHz

Note: Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%.

TYP

130

50

MAX

10

50

1

1.5

500

200

UNIT

V

V

V

uA

uA

V

V

pF

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R209-024.E

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