HUF75623P3 데이터 시트보기 (PDF) - Fairchild Semiconductor

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HUF75623P3

22A, 100V, 0.064 Ohm, N-Channel, UltraFET® Power MOSFETs

Fairchild Semiconductor 

Data Sheet

HUF75623P3, HUF75623S3ST

December 2001

22A, 100V, 0.064 Ohm, N-Channel,

UltraFET® Power MOSFETs

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

DRAIN

(FLANGE)

DRAIN

(FLANGE)

HUF75623P3

GATE

SOURCE

HUF75623S3ST

Symbol

D

G

S

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.064Ω, VGS = 10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF75623P3

TO-220AB

75623P

HUF75623S3ST

TO-263AB

75623S

NOTE: When ordering, use the entire part number i.e., HUF75623P3

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF75623P3, HUF75623S3ST UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

100

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Drain Current

Continuous

Continuous

(TC

(TC

=

=

21050oCoC, V, VGGSS==101V0V) )(F(Figiugruere2)2)

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ID

ID

22

15

A

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 14, 15

Power Dissipation . . .

Derate Above 25oC

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PD

...

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

NOTE:

1. TJ = 25oC to 150oC.

85

0.57

-55 to 175

300

260

W

W/oC

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation

HUF75623P3, HUF75623S3ST Rev. B

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