HY27SS08121M-F 데이터 시트보기 (PDF) - Hynix Semiconductor

부품명

상세내역

제조사

HY27SS08121M-F

512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory

Hynix Semiconductor 

MARKING INFORMATION

Package

HY27SS(08/16)121M Series

HY27US(08/16)121M Series

512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

Marking Example

TSOP1

/

WSOP1

/

FBGA

K

O

R

H

Y

2

7

x

S

x

x

1

2

1

M

x

x

x

x

Y WW

x

x

- hynix

- KOR

: Hynix Symbol

: Origin Country

- HY27xSxx121mTxB

: Part Number

HY: HYNIX

27: NAND Flash

x: Power Supply

: U(2.7V~3.6V), S(1.7V~2.2V)

S: Classification

: Single Level Cell+Single Die

xx: Bit Organization

: 08(x8), 16(x16)

12: Density

: 512Mb

1: Mode

: 1nCE & 1R/nB; CE don't care

M: Version

: 1st Generation

x: Package Type

: T(TSOP1), V(WSOP1), F(FBGA)

x: Package Material

x: Operating Temperature

: Blank(Normal), P(Lead Free)

: C(0℃~70℃), E(-25℃~85℃)

I(-40℃~85℃)

x: Bad Block

: B(Included Bad Block), S(1~5 Bad Block),

P(All Good Block)

- Y: Year (ex: 4=year 2004, 05= year 2005)

- ww: Work Week (ex: 12= work week 12)

- xx: Process Code

Note

- Capital Letter

- Small Letter

: Fixed Item

: Non-fixed Item

Rev 0.6 / Oct. 2004

43

Share Link: