IRF630 데이터 시트보기 (PDF) - Philips Electronics
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IRF630 Datasheet PDF : 9 Pages
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF630, IRF630S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
Non-repetitive avalanche Unclamped inductive load, IAS = 5 A;
energy
tp = 380 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig;14
IAS
Peak non-repetitive
avalanche current
MIN.
-
MAX.
250
UNIT
mJ
-
9
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
-
- 1.7 K/W
SOT78 package, in free air
- 60 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VGS = 10 V; ID = 5.4 A
Tj = 175˚C
VDS = 25 V; ID = 5.4 A
VGS = ± 20 V; VDS = 0 V
VDS = 200 V; VGS = 0 V
VDS = 160 V; VGS = 0 V; Tj = 175˚C
ID = 5.9 A; VDD = 160 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 100 V; RD = 10 Ω;
VGS = 10 V; RG = 5.6 Ω
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
200 -
-
V
178 -
-
V
2
3
4
V
1
-
-
V
-
6
V
- 300 400 mΩ
-
- 1.12 Ω
3.8 9
-
S
- 10 100 nA
- 0.05 10 µA
-
- 250 µA
-
- 39 nC
-
- 6.3 nC
-
- 21 nC
-
8
- ns
- 19 - ns
- 25 - ns
- 15 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 959 - pF
- 93 - pF
- 54 - pF
August 1999
2
Rev 1.100
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