M2S28D20ATP 데이터 시트보기 (PDF) - Mitsumi

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M2S28D20ATP

128M Double Data Rate Synchronous DRAM

Mitsumi 

DDR SDRAM (Rev.0.1)

Jun,'00 Preliminary

MITSUBISHI LSIs

M2S28D20/ 30/ 40ATP

128M Double Data Rate Synchronous DRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Vdd

VddQ

VI

VO

IO

Pd

Topr

Tstg

Parameter

Supply Voltage

Supply Voltage for Output

Input Voltage

Output Voltage

Output Current

Power Dissipation

Operating Temperature

Storage Temperature

Conditions

with respect to Vss

with respect to VssQ

with respect to Vss

with respect to VssQ

Ta = 25 oC

Ratings

Unit

-0.5 ~ 3.7

V

-0.5 ~ 3.7

V

-0.5 ~ Vdd+0.5

V

-0.5 ~ VddQ+0.5

V

50

mA

1000

mW

0 ~ 70

oC

-65 ~ 150

oC

DC OPERATING CONDITIONS

(Ta=0 ~ 70oC, unless otherwise noted)

Symbol

P arameter

L im its

U nit N ote s

M in.

Typ.

M ax.

V dd

S upply V olta ge

2.3

2.5

2.7

V

V ddQ

S upply V olta ge for O utput

2.3

2.5

2.7

V

V ref

Input R e fe re nc e V olta ge

0.49*V ddQ 0.50*V ddQ 0.51*V ddQ V 5

V IH (D C)

H igh-L e ve l Input V olta ge

V ref + 0.18

VddQ+0.3 V

V IL(D C)

L ow -L e ve l Input V olta ge

-0.3

V ref - 0.18 V

V IN (D C ) Input V olta ge L e ve l, C L K a nd /C L K

-0.3

V ddQ + 0.3 V

V ID (D C ) Input D iffe re ntia l V olta ge , C L K a nd /C L K

0.36

V ddQ + 0.6 V 7

VTT

I/O T e rm ina tion V olta ge

V ref - 0.04

V ref + 0.04 V 6

CAPACITANCE

(Ta=0 ~ 70oC, Vdd = VddQ = 2.5V + 0.2V, Vss = VssQ = 0V, unless otherwise noted)

Symbol

CI(A)

CI(C)

CI(K)

CI/O

CO(QF)

Parameter

Limits

Delta

Test Condition Min. Max. Cap.(Max.) Unit Notes

Input Capacitance, address pin

Input Capacitance, control pin

VI=1.25v

2.0 3.0

0.50

pF 11

2.0 3.0

pF 11

Input Capacitance, CLK pin

f=100MHz

2.0 3.0

0.25

pF 11

I/O Capacitance, I/O, DQS, DM pin VI=25mVrms 4.0 5.0

pF 11

0.50

Output Capacitance, /QFC

2.0 3.0

pF 11

MITSUBISHI ELECTRIC

16

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