MBM29LV008BA-70 데이터 시트보기 (PDF) - Spansion Inc.

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MBM29LV008BA-70

FLASH MEMORY CMOS 8M (1M × 8) BIT

Spansion Inc. 

MBM29LV008TA/BA-70/90

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Limit

Min

Typ

Max

Sector Erase Time

—

1

10

Byte Programming Time

—

8

300

Chip Programming Time

—

8.4

25

Erase/Program Cycle

100,000

—

—

Unit

Comments

s

µs

s

cycle

Excludes programming time

prior to erasure

Excludes system-level

overhead

Excludes system-level

overhead

—

s TSOP(1) PIN CAPACITANCE

Parameter

Symbol

Input Capacitance

CIN

Output Capacitance

COUT

Control Pin Capacitance

CIN2

Note : Test conditions TA = +25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ

Max

Unit

7

10

pF

8

10

pF

10

12

pF

28

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