MJ4030 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJ4030

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

MJ4030

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-Emitter Breakdown Voltage IC=-100mA; IB=B 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA

VBE(sat) Base-Emitter Saturation Voltage

IC=-5A; IB=-400mA

VBE(on) Base-Emitter On voltage

ICER

Collector Cutoff Current

ICEO

Collector Cutoff current

IC=-10A ; VCE=-3V

VCB=-60V; RBE= 1KΩ;

VCB=-60V; RBE= 1KΩ; TC= 150℃

VCE=-30V; IB=0

IEBO

Emitter Cut-off current

VEB=-5V; IC= 0

hFE

DC Current Gain

IC=-10A ; VCE=-3V

MIN MAX UNIT

-60

V

-2.5

V

-4

V

-3

V

-3

V

-1

-5

mA

-3

mA

-5

mA

1000

isc Website：www.iscsemi.cn

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