MJE16004 데이터 시트보기 (PDF) - SavantIC Semiconductor

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MJE16004

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

MJE16004

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

VCE(sat)-1

VCE(sat)-2

VBE(sat)

ICEV

IEBO

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector cut-off current

Emitter cut-off current

IC=1.5A ;IB=0.15A

IC=3A ;IB=0.3A

TC=100

IC=3A ;IB=0.3A

TC=100

VCEV=850V; VBE=1.5V

TC=100

VEB=6V; IC=0

hFE

DC current gain

IC=5A ; VCE=5V

COB

Collector outoput capacitance

IE=0 ; VCB=10V;f=1.0kHz

Switching times resistive load,Duty Cycle@2.0%,Pulse Width=30µs

td

Delay time

tr

Rise time

ts

Storage time

tf

Fall time

VCC=250V ,IC=3A

IB1=0.3A; IB2=0.6A

MIN TYP. MAX UNIT

450

V

1.0

V

2.5

2.5

V

1.5

1.5

V

0.25

1.5

mA

1.0 mA

7

200 pF

0.1

µs

0.3

µs

2.7

µs

0.35 µs

2

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