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MMBD301 데이터 시트보기 (PDF) - TY Semiconductor
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MMBD301
Schottky Barrier Diode
TY Semiconductor
MMBD301 Datasheet PDF : 1 Pages
1
Product specification
MMBD301
Features
SOT-23
2.9
+0.1
-0.1
0.4
+0.1
-0.1
3
1
2
0.95
+0.1
-0.1
1.9
+0.1
-0.1
Unit: mm
0.1
+0.05
-0.01
Absolute M axim um R atings T a = 25
Param eter
W orking Inverse Voltage
Forward P ower D issipation @ T
A
= 25
Derate above 25
Storage tem perature range
O perating Junction Tem perature
Sym bol
W
IV
pF
T
STG
T
J
V a lu e
25
200
2.0
-55 to +150
-55 to +125
U n it
V
mW
mW/
1.Base
2.Emitter
3.collector
Electrical C haracteristics T a = 25
Param eter
B reakdown V oltage
Reverse Leakage
Sym bol
B
V
I
R
Forward V oltage
V
F
C apacitance
C
T
C onditions
I
R
= 10 A
V
R
= 25 V
I
F
= 1.0 m A
I
F
= 10 m A
V
R
= 15 V, f = 1.0 M Hz
M in
Max
U nit
30
V
200
nA
450
mV
600
1.5
pF
Marking
Marking
4T
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