MMFT960T1(2000) 데이터 시트보기 (PDF) - ON Semiconductor
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MMFT960T1 Datasheet PDF : 8 Pages
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MMFT960T1
TYPICAL ELECTRICAL CHARACTERISTICS
5
VGS = 10 V
4
3
TJ = 125°C
2
25°C
1
0
0 0.5
1
1.5
2
ID, DRAIN CURRENT (AMPS)
-ā55°C
2.5
Figure 3. On–Resistance versus Drain Current
10
ID = 1 A
VGS = 10 V
1
0.1-ā75 -ā50 -ā25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On–Resistance Variation with Temperature
1
TJ = 125°C
TJ = 25°C
0.1
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN DIODE FORWARD VOLTAGE (VOLTS)
Figure 5. Source–Drain Diode Forward Voltage
250
225
200
175
150
125
100
75
50
25
0
0
VGS = 0 V
f = 1 MHz
TJ = 25°C
Ciss
Coss
Crss
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
10
9
8
7
ID = 1 A
TJ = 25°C
VDS = 30 V
6
VDS = 48 V
5
4
3
2
1
0
0 0.5 1
1.5 2
2.5 3
3.5 4
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Gate Charge versus Gate–to–Source Voltage
2
VDS = 10 V
1.5
1
TJ = -ā55°C
0.5
25°C
125°C
0
0
0.5
1
1.5
2
2.5
ID, DRAIN CURRENT (AMPS)
Figure 8. Transconductance
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3
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