MMST5401 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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MMST5401

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

MMST5401

TRANSISTOR(PNP)

FEATURES

 Complementary to MMST5551

 Small Surface Mount Package

 Ideal for Medium Power Amplificationand Switching

SOT–323

MARKING:K4M

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-160

VCEO Collector-Emitter Voltage

-150

VEBO Emitter-Base Voltage

-5

IC

Collector Current

-600

PC

Collector Power Dissipation

200

RΘJA Thermal Resistance From Junction To Ambient

625

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max Unit

Collector-base breakdown voltage

V(BR)CBO IC=-100µA, IE=0

-160

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0

-150

V

Emitter-base breakdown voltage

V(BR)EBO IE=-10µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-120V, IE=0

-50

nA

Emitter cut-off current

IEBO

VEB=-3V, IC=0

-50

nA

VCE=-5V, IC=-1mA

50

DC current gain

hFE

VCE=-5V, IC=-10mA

60

300

VCE=-5V, IC=-50mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

-0.5

V

-0.2

V

Base-emitter saturation voltage

VBE(sat)

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

-1

V

-1

V

Transition frequency

fT

VCE=-10V,IC=-10mA , f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

6

pF

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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