MX29F8100 데이터 시트보기 (PDF) - Macronix International

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MX29F8100

8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY

Macronix International 

INDEX

MX29F8100

DC CHARACTERISTICS = 0°C to 70°C, VCC = 5V±10%(CONTINUE P.21)

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0V, T = 25°C. These currents are valid for all product

versions (package and speeds).

2. ICC3 is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ICC3

and ICC1/2.

3. VIL min. = -1.0V for pulse width < 50ns.

VIL min. = -2.0V for pulse width < 20ns.

4. VIH max. = VCC + 1.5V for pulse width < 20ns. If VIH is over the specified maximum value, read operation cannot be guaranteed.

AC CHARACTERISTICS READ OPERATIONS

SYMBOL

tACC

tCE

tOE

tDF

tOH

tBACC

tBHZ

tDPR

DESCRIPTIONS

Address to Output Delay

CE to Output Delay

OE to Output Delay

OE High to Output Delay

Address to Output hold

BYTE to Output Delay

BYTE Low to Output in High Z

Deep Power-Down Recovery

29F8100-12 29F8100-15

MIN. MAX. MIN. MAX. UNIT CONDITIONS

120

150 ns

CE=OE=VIL

120

150 ns

OE=VIL

60

70

ns

CE=VIL

0

55

0

55

ns

CE=VIL

0

0

ns

CE=OE=VIL

120

150 ns

CE= OE=VIL

55

55

ns

CE=VIL

700

800 ns

TEST CONDITIONS:

• Input pulse levels: 0.45V/2.4V

• Input rise and fall times: 10ns

• Output load: 1TTL gate+100pF(Including scope and jig)

• Reference levels for measuring timing: 0.8V, 2.0V

NOTE:

1. tDF is defined as the time at which the output achieves the

open circuit condition and data is no longer driven.

P/N: PM0262

REV. 2.0, JAN. 22, 1999

22

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