NT5SV16M4DT 데이터 시트보기 (PDF) - Unspecified
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NT5SV16M4DT Datasheet PDF : 21 Pages
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NT5SV16M4DT
NT5SV8M8DT
NT5SV4M16DT
64Mb Synchronous DRAM
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VIN
VOUT
TA
TSTG
PD
IOUT
Parameter
Power Supply Voltage
Power Supply Voltage for Output
Input Voltage
Output Voltage
Operating Temperature (ambient)
Storage Temperature
Power Dissipation
Short Circuit Output Current
Rating
-0.3 to +4.6
-0.3 to +4.6
-0.3 to VDD+0.3
-0.3 to VDD+0.3
0 to +70
-55 to +125
1.0
50
Units
V
V
V
V
°C
°C
W
mA
Notes
1
1
1
1
1
1
1
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this spec-
ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions (TA = 0°C to 70°C)
Symbol
Parameter
Min.
VDD
Supply Voltage
3.0
VDDQ
Supply Voltage for Output
3.0
VIH
Input High Voltage
2.0
VIL
Input Low Voltage
-0.3
1. All voltages referenced to VSS and VSSQ.
2. VIH (max) = VDD + 1.2V for pulse width ≤ 5ns.
3. VIL (min) = VSS - 1.2V for pulse width ≤ 5ns.
Rating
Typ.
3.3
3.3
—
—
Max.
3.6
3.6
VDD + 0.3
0.8
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ± 0.3V)
Symbol
Parameter
Min.
Input Capacitance (A0-A11, BS0, BS1, CS, RAS, CAS, WE, CKE, DQM)
2.5
CI
Input Capacitance (CK)
2.5
CO
Output Capacitance (DQ0 - DQ15)
4.0
Units
V
V
V
V
Notes
1
1
1, 2
1, 3
Typ
Max.
Units
3.0
3.8
pF
2.8
3.5
pF
4.5
6.5
pF
REV 1.1
10/01
13
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
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