NTP4302, NTB4302
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 37 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 10 Adc)
Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc, RG = 2.5 W) (Note 3)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 10 Adc,
VGS = 4.5 Vdc, RG = 2.5 W) (Note 3)
Fall Time
Gate Charge
(VDS = 24 Vdc, ID = 37 Adc,
VGS = 4.5 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min
Typ
Max
Unit
30
−
−
25
Vdc
−
−
mV/°C
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
Vdc
1.0
1.9
3.0
−
−3.8
−
mV/°C
mW
−
6.8
9.3
6.8
9.3
9.5
12.5
−
40
−
mhos
−
2050 2400
pF
−
640
800
−
225
310
−
10
18
ns
−
22
35
−
45
75
−
35
70
−
18
−
ns
−
70
−
−
32
−
−
30
−
−
28
−
nC
−
7.5
−
−
19
−
−
0.90
1.3
Vdc
−
0.75
−
−
37
−
ns
−
21
−
−
16
−
−
0.035
−
mC
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