RB501V-40 데이터 시트보기 (PDF) - Semtech Electronics LTD.
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RB501V-40 Datasheet PDF : 3 Pages
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RB501V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• High reliability
Applications
• Low current rectification
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
S7
Top View
Marking Code: "S7"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
at IF = 10 mA
Reverse Current
at VR = 10 V
Capacitance Between Terminals
at VR = 10 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol
Value
Unit
VRM
45
V
VR
40
V
IO
0.1
A
IFSM
1
A
Tj
125
OC
Ts
- 40 to + 125
OC
Symbol
Typ.
Max.
Unit
VF
-
0.55
V
VF
-
0.34
V
IR
-
30
µA
CT
6
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
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