Philips Semiconductors
GSM 4 W power amplifier
Preliminary specification
CGY2013G
FEATURES
• Power Amplifier (PA) overall efficiency 52%
• 35.5 dB gain
• 0 dBm input power
• Gain control range >55 dB
• Low output noise floor of PA < −130 dBm/Hz in GSM RX
band
• Wide operating temperature range −20 to +85 °C
• LQFP 48 pin package
• Compatible with power ramping controller PCF5077
• Compatible with GSM RF transceiver SA1620.
GENERAL DESCRIPTION
The CGY2013G is a GSM class 4 GaAs Monolithic
Microwave Integrated Circuit (MMIC) power amplifier
specifically designed to operate at 3.6 V battery supply.
The PA requires only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
It can be switched off and its power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.
APPLICATIONS
• 880 to 915 MHz hand-held transceivers for E-GSM
applications
• 900 MHz Time Division Multiple Access (TDMA)
systems.
QUICK REFERENCE DATA
SYMBOL
PARAMETER (1)
MIN.
VDD
positive supply voltage
−
IDD
positive peak supply current
−
Po(max)
maximum output power
−
Tamb
operating ambient temperature
−20
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
TYP.
3.6
2.4
35.5
−
MAX.
−
−
−
+85
UNIT
V
A
dBm
οC
ORDERING INFORMATION
TYPE
NUMBER
CGY2013G
PACKAGE
NAME
DESCRIPTION
LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm
VERSION
SOT313-2
1998 Jan 23
2