FP101 데이터 시트보기 (PDF) - WJ Communications => Triquint
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FP101 Datasheet PDF : 4 Pages
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FP101
High Dynamic Range FET
The Communications Edge TM
Product Information
Typical Device Data
S-Parameters (Vds = 8 V, Ids = 100 mA, 25°C, Unmatched 50 ohm system)
S21 and MaximumStable Gain
S11
30
DB(|S[2,1]|)
S21
25
DB(MSG)
MSG
20
15
10
-0.2
5
0
-0.4
0
1
2
3
4
5
Frequency (GHz)
Swp Max
5.05GHz
3.0
4.0
5.0
10.0
-0.2
-0.4
Swp Min
0.05GHz
S22
Swp Max
5.05GHz
3.0
4.0
5.0
10.0
Swp Min
0.05GHz
Reference Design (1800 – 1900 MHz)
Typical Performance
Parameter
Frequency
S21 - Gain
S11 - Input Return Loss
S22 - Output Return Loss
S12 - Isolation
Output IP3
Output P1dB
Noise Figure
Drain Bias
Value
1850 MHz
13.9 dB
-23.6 dB
-13.5 dB
-20.9 dB
36.2 dBm
23.3 dBm
3.6 dB
5 V @ 100 mA
Comments
See Note 1, 3
See Note 3
Notes
1. OIP3 is measured with 2 tones at an output power of +10 dBm/tone with 10 MHz
spacing at 1850 MHz. The suppression on the largest IM3 product is used to calculate
OIP3 using a 2:1 slope rule. Test parameters were taken at 25 °C.
2. All components are 0603 size. Toko LL1608-FH chip inductors and AVX ±0.1 pF
tolerance capacitors (C3 and C5) were used in the design. Other capacitor components
are standard types. The overall circuit size should be minimized as much as possible.
3. The drain voltage can be increased to +8 V for increased output power performance
(higher P1dB, higher OIP3). The gate voltage can be adjusted so that the drain bias can
be anywhere between 50 - 150 mA.
Vgs
C2
0.018 µF
S-Parameters
15
0
14
S21
-5
13
-10
12 S22
-15
11
-20
10
S12 -25
S11
9
-30
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
R1
51 Ω
C2
68 pF
Vds = + 5 V
100 mA C4
68 pF
RF IN
C1
68 pF
L1
18 nH
L2
3.3 nH
C3
2.7 pF
R2
5.1 Ω
L3
8.2 nH
FP101
L4
2.2 nH
C6
68 pF
RF OUT
C5
1.5 pF
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
September 2003
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