STTH20003TV 데이터 시트보기 (PDF) - STMicroelectronics
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STTH20003TV Datasheet PDF : 7 Pages
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STTH20003TV
Characteristics
Figure 1. Conduction losses versus
Figure 2. Forward voltage drop versus
average forward current (per diode)
forward current (per diode)
P1(W)
120
δ = 0.2
δ = 0.5
100
δ = 0.1
δ=1
δ = 0.05
80
60
40
T
20
IF(av) (A)
δ=tp/T
tp
0
0
20
40
60
80
100 120
IFM(A)
500
100
10
Tj=125°C
(Typical values)
Tj=25°C
Tj=125°C
1
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt (90% confidence, per
diode)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
5E+0
IRM(A)
40
VR=200V
35 Tj=125°C
IF=2xIF(av)
30
IF=IF(av)
25
IF=0.5xIF(av)
20
15
10
5
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 5. Reverse recovery time versus
Figure 6. Softness factor (tb/ta) versus
dIF/dt (90% confidence, per diode)
dIF/dt (typical values, per diode)
trr(ns)
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0 50
IF=2xIF(av)
IF=IF(av)
VR=200V
Tj=125°C
IF=0.5xIF(av)
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
S factor
0.6
0.5
VR=200V
Tj=125°C
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
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